Module Notes

Microelectronics Technology

0
This module will not be offered for this semester
Faculty Member (Members)
dim
Undergraduate
Spring
5th Year
10th Semester (5th Year, Spring)
Module Type
Core Chemical Engineering
Module Category
Thematic Unit Electives, Group C
Course Code:
CHM_E_Γ4
Course URL:
E-Class (CMNG2103)
Credits:
3
ECTS Credits:
4
Module Availability on Erasmus Students:
No
Teaching Language:
English/Greek
Laboratory:
Lectures:
3h/W
Τutorial:
Project/Homework:
2/Semester
Teaching Type
Student's office hours:
Module Details

Acquaintance with the specifics of Chemical and Physical processes used in microelectronics processing (CVD, PVD, MBE, Sputtering, PECVD, Etching) using the fabrication of Silicon IC’s as a paradigm.

Application of reactor design and transport phenomena in the microscopic processing steps of IC fabrication.

Ability to apply Chemical Engineering Principles on a different scale in non-classical chemical engineering problems

Prerequisites desired:  Materials Science, Chemical Kinetics, Reactor Design and Transport Phenomena.

Introduction. Integrated Circuits (IC). Semiconductors and charge carriers, basic relationships. Elementary IC units, diodes and transistors, device physics and operation. Outline of IC production: from sand to IC’s.

Metallurgical Grade Silicon production. Silicon refining, Electronic Grade Silicon. Production and refinement of chlorosilanes. Deposition of polycrystalline silicon: Siemens, fluidized bed.

Crystal Growth. Czochralski (CZ), Bridgeman and floating zone methods. Overview of CZ, axial and radial distribution of dopants and oxygen.

Chemical Processes. Chemical Vapor Deposition (CVD). Surface diffusion and epitaxial growth. Homogeneous and heterogeneous reactions and deposition kinetics. CVD reactors. Flow and heat regimes, reactor design.

Doping. Incorporation and transport of dopants. Diffusion in solids, redistribution of dopants.

Lithography. Basic principles and techniques. Resists and resist development.

Physical and Physicochemical Processes. Evaporation (PVD) and Molecular Beam Epitaxy (MBE). Plasma Processing. Sputtering (dc, rf), sputtering rates and deposition rate. Plasma Enhanced Chemical Vapor Deposition (PECVD). Plasma Etching. PVD and Plasma reactors: specifics, electrical characteristics and design considerations.

Teaching Organization

LECTURES: 3 h/w
PROJECT / HOMEWORK: 2/semester

Total Module Workload (ECTS Standards):

100 Hours

Final mark based on the final written exam.  4 written tests and 2 homework assignments are taken into consideration.

  1. Fundamentals of Microelectronics Processing. Hong. H. Lee. McGraw-Hill. ISBN-0-07100796-2
  2. Process Engineering Analysis in Semiconductor Device Fabrication. S.Middleman, A. Hochberg, McGraw-Hill, ISBN-0-07041853-5